 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| e PTB 20179 0.4 Watt, 1.8-2.0 GHz Cellular Radio RF Power Transistor Description The 20179 is an NPN, common emitter RF power transistor intended for class A, 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 0.4 watt minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 0.4 Watt, 1.8-2.0 GHz Class A Characteristics Gold Metallization Silicon Nitride Passivated Surface Mountable Available in Tape and Reel Typical Output Power vs. Input Power 1.0 Output Power (Watts) 0.8 0.6 0.4 0.2 0.0 0.00 VCC = 26 V IC = 120 mA f = 2.0 GHz 20 17 9 LO TC OD E 0.02 0.04 0.06 0.08 0.10 0.12 Input Power (Watts) Package 20227 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25C Above 25C derate by Storage Temperature Range Thermal Resistance (Tflange = 70C) TSTG RJC Symbol VCER VCBO VEBO IC PD Value 50 50 4.0 0.5 5.4 0.031 -40 to +150 32.3 Unit Vdc Vdc Vdc Adc Watts W/C C C/W 1 9/28/98 PTB 20179 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions IB = 0 A, IC = 10 mA, RBE = 22 VBE = 0 V, IC = 5 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 250 mA Symbol V(BR)CER V(BR)CES V(BR)EBO hFE Min 50 50 4 20 Typ -- -- 5 40 Max -- -- -- -- Units Volts Volts Volts -- RF Specifications (100% Tested) Characteristic Gain (VCC = 26 Vdc, Pout = 0.2 W, IC = 120 mA, f = 2.0 GHz) Output Power at 1 dB Compressed (VCC = 26 Vdc, IC = 120 mA, f = 2.0 GHz) Load Mismatch Tolerance (VCC = 26 Vdc, Pout = 0.2 W, IC = 120 mA, f = 2.0 GHz--all phase angles at frequency of test) Symbol Gpe P-1dB Min 8 0.4 -- Typ 10 0.6 -- Max -- -- 5:1 Units dB Watts -- Typical Performance POUT, Gain & Efficiency (at P-1dB) vs. Frequency Gain (dB) & Output Power (W) 10 Gain (dB) 8 Efficiency (%) 6 4 2 Output Power (W ) 0 1750 1800 1850 1900 1950 2000 5 2050 20 15 10 30 25 Intermodulation Distortion vs. Output Power 0 -10 VCC = 26 V IC = 120 mA f1 = 1999.9 MHz f2 = 2000.0 MHz IM3 Efficiency (%) -20 IMD (dBc) -30 -40 -50 -60 VCC = 26 V IC = 120 mA IM5 -70 0.0 0.2 IM7 0.4 0.6 0.8 Frequency (MHz) Output Power (Watts-PEP) 2 5/6/98 e Impedance Data VCC = 26 Vdc, Pout = 0.2 W, IC = 120 mA Z0 = 50 PTB 20179 Z Source Z Load Frequency GHz 1.75 1.80 1.85 1.90 1.95 2.00 2.05 R 12.0 12.6 13.0 12.8 11.0 10.4 11.9 Z Source jX -0.9 -1.2 -1.7 -2.5 -1.9 -1.3 1.2 R 20.8 23.3 21.2 19.4 18.2 17.5 17.2 Z Load jX 28.0 28.3 26.3 23.8 23.2 23.7 24.0 Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. L1F (c) 1996 Ericsson Inc. EUS/KR 1301-PTB20179 Uen Rev. C 09-28-98 3 5/6/98 |
Price & Availability of PTB20179
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |